In modern data centers, the evolution toward higher bus voltages and denser power delivery infrastructure demands advanced hot-swap capabilities. Traditional solutions leveraging silicon-based MOSFETs ...

By using the ideal diode complementary representation it is possible to derive the complementary models for each state of an ideal electronic switch or, in another hand, it is possible to represent an ...

Maurizio Di Paolo Emilio is editor-in-chief of Power Electronics News and embedded.com, as well as an EE Times correspondent. He holds a Ph. D. in Physics and is a Telecommunications Engineer. He has ...

Today, it’s a pleasure to have a special guest, Marijana Vukicevic, joining us to discuss the evolving role of microcontrollers (MCUs) in high-performance motor control and power conversion ...

The WBG market in power applications SiC and GaN growth by segment According to Yole Group, the power global market is estimated to grow from $23 billion in 2023 to $56 million in 2029. As shown by ...

The Applied Power Electronics Conference (APEC) 2025 opened with a keynote address highlighting the event’s history, community, and ongoing contributions to the industry. This year’s conference marked ...

An addition to Infineon’s rad-tolerant portfolio The 60-V P-channel MOSFET, shown in Figure 1, complements Infineon’s existing 60-V and 150-V N-channel devices. Unlike traditional rad-hardened devices ...

2024 has been a crucial year for the power electronics sector in terms of development, preparing for radical changes in 2025 and beyond. Wide-bandgap (WBG) semiconductors and artificial-intelligence ...

Electric motors offer numerous performance advantages over traditional internal-combustion engines (ICEs). One of the main advantages is the ability to provide maximum torque instantly, improving the ...

Where V IN is the static V DS voltage, t is the inductor charging time, L is the value of the inductor, and C oss the GaN DUT output capacitance. For a fixed t, the V DS,peak can be tuned by the value ...

The system incorporates overcurrent protection (OCP), an adjustable current setting threshold, a time delay feature, and a safe start-up mechanism that allows for flexible blanking during MOSFET ...

Silicon Carbide (SiC) is a compound semiconductor composed of silicon (Si) and carbon (C). SiC can be doped by n-type with nitrogen or phosphorous and p-type with beryllium, boron, aluminum, or ...