The 70 mm x 60 mm board, which comes with a MAX40661 transimpedance amplifier, is designed to accelerate design and ...

The advantages of power amplifier designs on RF GaN-on-Si technology as higher frequencies for 5G advanced and 6G emerge, ...

The power amplifiers market is valued at USD 31.2 billion in 2025 and is projected to reach USD 57.1 billion by 2035, ...

This article presents the analysis and design of a 26-GHz RF-input load-modulated balanced amplifier (LMBA) using a miniaturized dual-loop (MDL) coupler, implemented in a 0.12- μm gallium nitride (GaN ...

The TA1165 is a Class AB gallium nitride (GaN)-based amplifier delivering up to 20 W of RF output power across the 5.5 GHz to ...

In this paper, an 800W, L-Band internally matched power amplifier has been developed. Taiwan win $0.45\\mu \\mathrm{m}$ gallium nitride (GaN) high electron mobility transistor (HEMT) technology is ...