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本文引用地址:安森美 (onsemi) cascode FET (碳化硅共源共栅场效应晶体管)在硬开关和软开关应用中有诸多优势,本文将重点介绍Cascode结构。Cascode ...
什么是碳化硅Cascode JFET技术?. 众多终端产品制造商已选择碳化硅技术替代传统硅技术,基于双极结型晶体管(BJT)、结型场效应晶体管(JFET ...
并联Cascode等高增益器件尤其具有挑战性。遵循这些实践方案有助于成功实现 SiC JFET cascode的并联工作。 Cascode背景知识. 如图 1 所示,cascode 结构是由一个常开 SiC JFET(碳化硅结型场效应晶体管) 与一个低压 Si MOSFET (硅金属-氧化物半导体场效应晶体管)串联而成。
集微网消息,6月16日,华灿光电在机构调研时表示,预计 2022 年底推出 650V cascode 产品。谈及目前MiniLED行业,华灿光电认为,MiniLED将带动显示技术的 ...
香港科技大学电子与计算机工程系陈敬教授课题组 , 在第70届国际电子器件大会(IEEE International Electron Devices Meeting, IEDM 2024)上报告了多项基于宽禁带半导体氮化镓,碳化硅的最新研究进展。 研究成果覆盖功率器件技术和新型器件技术: 高速且具备优越开关速度控制能力的3D堆叠式GaN/SiC cascode 功率 ...
用具有极低等效Qrr的Cascode GaN器件,使得PFC可以工作在连续电流模式提高效率的同时也不牺牲功率密度,实现高达99.1%的转换效率。 镓未来700W GaN电源 ...
4. When the GaN cascode turns on, from t 0 to t 1 the MOSFET’s V GS ramps up to its threshold and enters the miller plateau at t 2.At this point the V DS of the MOSFET is still high and the ...
DUBLIN--(BUSINESS WIRE)--The "UnitedSiC Cascode JFET 650V Family" report has been added to ResearchAndMarkets.com's offering.The silicon carbide (SiC) power market is taking off and its value will ...
The cascode GaN FET exhibits excellent body diode behaviour and this is one of the main features and advantages of 600V GaN cascode switches. Compared to igbts, superjunction or other Si FET ...
This fortnight's exposition of Design Ideas kicks off with another application of the cascode circuit. An earlier Design Idea used a cascode-connected MOSFET in a boost regulator, while this one ...
The cascode circuit also can produce any output voltage that's within Q 2 's drain-to-source breakdown-voltage rating. Specify other components with an appropriate voltage rating—for example, ...
Hybrid-cascode power transistors offer a convenient upgrade path from standard power MOSFETs and IGBTs when trying to leverage the performance advantages of wide-bandgap semiconductors.